It depends upon the thickness of the oxide. A standard I.C. depends
upon a Silicon Dioxide layer being an insulator with aluminum lines
crossing over the oxide.  We rely on this thick layer not being reduced
by the annealing of the aluminum.  Typical oxide thickness 10,000
Angstroms will remain an insulator.  Bill Moffat

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of polly
Sent: Monday, May 22, 2006 12:39 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Query regarding ability of Aluminum to reduce
nativeSiO2


Dear Sir
I would to enquire if aluminum deposited on native oxide would give an
ohmic contact after post metalization anneal cycle at 450C. as
theoretically aluminum can reduce the native oxide to make contact with
silicon.

pourus