Hi,

I'm trying do dry etch aluminum thin films (~250 nm). The problem is
that standard dry etching reciped for Al include BCl3 to get rid of
the native oxide layer, and I don't have that gas. I have Cl2, CF4,
SF6, N2, HBr... Is there a way to get the job done with those gases?

Thank you,

Martin Aguilar
Rutherford Physics Building
3600 rue University
McGill University
Montreal, QC Canada
martin.aguilar@mail.mcgill.ca