Hi, all
I am working on doping silicon wafer using boron diffusion.
But I don't know how to evaluate the doping depth.
I tried CP-4A(HNO3:HF:HAC=5:3:3) at room temperature to reveal the
interface between the p area and n area. The etching speed appears
very fast, seems not work.
Is there anyone has such experience?
Or how to reveal the interface?
Thank you.