Hi,

At the moment I use the solution consisting of 9% HF + 11% H2O + 90% Isopropanol
(vol.%). Etching in the dark at the ambient temperature. P+-type, 0.02 Ohm_cm,
(100) single crystal silicon is used.
Do you happen to have the thermal properties data (TEC, specific heat) for
oxidized porous silicon (300°C in dry O2 for 1 hour)?
Thanks a lot!

Natsuki


-----Ursprüngliche Nachricht-----
Von: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] Im
Auftrag von mohendra roy
Gesendet: Freitag, 24. November 2006 13:46
An: General MEMS discussion
Betreff: Re: [mems-talk] Porous silicon: thermal expansion coefficient,specific
heat

first let me know in what solution you etch the silicon. Than after i can
give you the exact value of the tharmal expansion coeffcient.

On 14/11/06, Miyakawa, Natsuki  wrote:
>
> Dear all,
>
> does anyone know the thermal expansion coefficient and specific heat of
> porous silicon? I know they are strongly dependent on the porosity, so the
> data for some specific parameters or rough estimation would also help.
> I would appreciate any informations and suggestions from you.