Hello All,

Has anybody tried through etch in drie with LF(380 khz, LF is tried to
reduce a notch on the interface,si-gl bonded wafer, si thickness 280um).I am
facing some problem in doing the same, platen power during etch 28W, during
passivation 20 W, duty cycle 25%.

Thanks, Ashwini

Ashwini Jambhalikar