Ashwini,

It's unusual to apply platen power during passivation.

Also your etch platen power seems rather high. What's your coil power?

What problem(s) do you have?

Regards,

Martin.



> -----Original Message-----
> From: ashwini jambhalikar [mailto:ashwini.jambhalikar@gmail.com]
> Sent: 09 February 2007 04:33
> To: mems-talk@memsnet.org
> Subject: [mems-talk] through etch using LF in drie
>
>
> Hello All,
>
> Has anybody tried through etch in drie with LF(380 khz, LF is tried to
> reduce a notch on the interface,si-gl bonded wafer, si
> thickness 280um).I am
> facing some problem in doing the same, platen power during
> etch 28W, during
> passivation 20 W, duty cycle 25%.
>