Hi all

    I need to deposite 0.3um LP Si3N4 on <100> Si wafer which is low
stress(<300MPa) and Particle-free. I have search a lot of papers on internet
.. The only way to get low stress Si3N4 is increasing DCS/NH3 ratio , but
particle contamination is getting worse. Is there anyone can share
informations about how to deposite low stress Si3N4 in LPCVD without
particle contamination.

Thanks in advance.
Wang