To contribute to an already heated :-) discussion:

Substrate heating in metal deposition has three main contributors:
a) heat of condensation of the metal atoms
b) kinetic energy of arriving atoms
c) resistive heating by secondary electrons

In more detail:
a) is entirely material dependant, and is usually between
    1(Cd) and 9(W) eV/atom
b) depends on the deposition process used, usually <1eV/atom for
    evaporation, 2-10eV for sputtering, up to 50eV for iPVD.
c) usually low for evaporation, can be very high in sputtering
    sources without proper magnetic confinement of secondary
    electrons emitted from the target.

klaus
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Klaus Beschorner
Metron Technology, European Legends Product Manager