Hi Everybody,
             I have been depositing 1.6 micron silicon dioxide by PECVD process
at 300 degrees temperature on silicon wafer coated with silicon nitride,after
that I am annealing at 620 degrees.Here I am having a problem that the deposited
oxide is peeling off,might be due to high stress ,so someone suggest me some
solution to sortout this problem.

Thankyou and Regards,
Uday.