Hi,
I am trying to pattern Gold (300nm)/Chromium (10nm) heaters on glass wafers via
lift-off using AZ5214E photoresist and e-beam evaporation.  Here's my process:

1.  Dehydration bake glass wafers at 220'C for 30-40mins after cleaning with
Acetone and IPA.
2.  Spin coat AZ5214E on glass wafers at 5000rpm
3.  Soft bake at 95'C for 2mins (on Si wafers, I use 95'C for 1min, since Si is
a better heat conductor than glass)
4.  Expose the coated glass wafer at 160mJ/sq cm.  Normally for Si wafers I
would use 74mJ/sq cm, but glass is transparent and has poorer reflectivity, so I
have more than doubled the exposure dose.
5.  Develop in AZ developer for 20-30s.
6.  E-beam evaporate Chromium (10nm) followed by Gold (300nm) through the
developed resist openings.
7.  Lift-off patterns with combination of Acetone and AZ300 Resist stripper with
ultrasonic treatment.

Here's the problem I faced.  After repeated rinses of Acetone and AZ300 Resist
stripper with sonication, some of the resist still remains on the patterns.

Can anyone help me by telling me how I can remove the remaining resist on the
patterned glass wafer?

Jeffrey