Hi,

I do not do the lift off process, but for genereal resist removal. I heat up
the AZ stripper to about 80 degrees and leave my samples in it for 20
minutes. That removes all the resist. I hope this is helpful for your
process.

Regards,
Leyla


On 3/23/07, Yue Mun Pun, Jeffrey  wrote:
>
> Hi,
> I am trying to pattern Gold (300nm)/Chromium (10nm) heaters on glass
> wafers via lift-off using AZ5214E photoresist and e-beam
> evaporation.  Here's my process:
>
> 1.  Dehydration bake glass wafers at 220'C for 30-40mins after cleaning
> with Acetone and IPA.
> 2.  Spin coat AZ5214E on glass wafers at 5000rpm
> 3.  Soft bake at 95'C for 2mins (on Si wafers, I use 95'C for 1min, since
> Si is a better heat conductor than glass)
> 4.  Expose the coated glass wafer at 160mJ/sq cm.  Normally for Si wafers
> I would use 74mJ/sq cm, but glass is transparent and has poorer
> reflectivity, so I have more than doubled the exposure dose.
> 5.  Develop in AZ developer for 20-30s.
> 6.  E-beam evaporate Chromium (10nm) followed by Gold (300nm) through the
> developed resist openings.
> 7.  Lift-off patterns with combination of Acetone and AZ300 Resist
> stripper with ultrasonic treatment.
>
> Here's the problem I faced.  After repeated rinses of Acetone and AZ300
> Resist stripper with sonication, some of the resist still remains on the
> patterns.
>
> Can anyone help me by telling me how I can remove the remaining resist on
> the patterned glass wafer?