Hello,
Seems, the protocol is fine. But make sure you have used the correct
exposure time with energy. You did not mention about the concentration
of the Developer. Try to use low concentration, 5:1,water:AZ Developer
good way to do that. In the total lift off, why not try with 3:1
water:AZ developer mix. I am sure you will be happy with the result.
Regards,

Mamun-Ur-Rashid
PhD Candidate
Orion 1.12
Centre for Nano & Microsystems
School of Science & Technology
University of Teesside.
TS1 3BA. U.K.
01642342428
www.mamun.info

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of Yue Mun Pun, Jeffrey
Sent: 04 April 2007 10:32
To: mems-talk@memsnet.org
Subject: [mems-talk] An effective way to do lift-off

Hi,
Can anyone tell me what is an effective way to do lift-off with resist
AZ5214E?  I have tried the following process
1.  Spin coat AZ5214E at 5000rpm on SiO2 or SU-8 wfr
2.  Bake at 95'C for 1min
3.  Expose at 74.1mJ/cm2
4.  Develop in AZ Developer for 20s
5.  Evaporate 10nm Cr & 300nm Gold at a rate of 0.07-0.09nm/s.
6.  Lift-off using Acetone

I have discovered that lifting off with acetone is more effectively done
with ultrasonic treatment, but ultrasonic treatment is too harsh when
the substrate is SU-8 as cracks will result.
How about using AZ300 Resist stripper at 80-90'C or is there a better
method?