The objective is to etch through vertical holes of 100 micron dimension in
Si wafer of 300 micron thickness.
I am using Si 110 wafer.
I have tried out a parallelogram with one of the angles equal to 70.6 and
the other as 109.4.
But each time, I am getting slanted faces which results in stopping of
etching.
Please help me regarding regarding this if at all vertical holes are
possible.
Thanks in advance

--
Sudarshan