Hi all,

The wafer supplier offer SOI wafers fabricated in several ways, including SIMOX
and bonding. As I need to anodically bond the SOI to glass, I wonder if the
intermediate SiO2 would make the bonding impossible.So my first question is:If
the choice of SOI fabrication process would affect the bonding process,or I just
need to pay attention to specifications like resistivity and SiO2
thickness(<100n?)?

  Both silicon layers of SOI is needed. They both have low resistivity but the
top silicon is much thicker than the hander layer.My second question is: Can I
just buy a double side polished SOI wafer and use the handle layer as the device
layer?Will this bring trouble to processes?

  Thank you  in advance.

Best Regards,
  Matthew King