SOI wafers can still anodically bond, although it is somewhat more difficult,
depending on oxide thickness. If the oxide is thin you may be able to get away
with simply increasing the voltage used.

If the oxide is too thick, you'll probably need to make a grounding contact
directly to the SOI surface - this is most easily accomplished by rotating a
flat marked glass 90º away from  the flat of the SOI, and making a grounding
contact directly to the edge exposed at the flat of the glass.

Best Regards,
Chad Brubaker

EV Group       invent * innovate * implement
Senior Process Engineer - Technology - Tel:  480.727.9635, Fax:  480.727.9700
e-mail: c.brubaker@EVGroup.com, www.EVGroup.com

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of matthew king
Sent: Thursday, April 19, 2007 6:49 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] will the SOI fabrication process affect the anodicbonding

Hi all,

The wafer supplier offer SOI wafers fabricated in several ways, including SIMOX
and bonding. As I need to anodically bond the SOI to glass, I wonder if the
intermediate SiO2 would make the bonding impossible.So my first question is:If
the choice of SOI fabrication process would affect the bonding process,or I just
need to pay attention to specifications like resistivity and SiO2
thickness(<100n?)?

  Both silicon layers of SOI is needed. They both have low resistivity but the
top silicon is much thicker than the hander layer.My second question is: Can I
just buy a double side polished SOI wafer and use the handle layer as the device
layer?Will this bring trouble to processes?