Hi all,
i deposited LPCVD silicon nitride on 4'' germanium wafers. I obtained a
very very bad uniformity of silicon nitride film.
Here are the process conditions:
DCS flow rate: 30sccm
NH3 flow rate: 150sccm
pressure: 200mtor
temperature: 750 °C
When depositing on silicon wafers using the same parameters i obtain a
good uniformity. Is there a way to obtain good uniform also on germanium
wafers ?

Best regards,
Andrea