Hi Heiko,

Did you try Spin on Glass :

http://ej.iop.org/links/rFX7FtpBR/7PdGtMMu3BGc8eyQav5vpA/jm7307.pdf

Anil Agiral
PhD student
MESA+ Institute for Nanotechnology,
University of Twente, The Netherlands


On 7/9/07, H.J. van der Linden  wrote:
>
> Hi All,
>
> I am making a microfluidic device for electrokinetic studies. The device
> will
> consist of a channel deep-etched into silicon and a top layer consisting
> of
> glass. I want to use anodic bonding to bond the device.
> Because I will use the device for electrokinetic studies I need to be able
> to
> apply high voltages over the liquid in the channel. A problem here is of
> course
> that the native oxide on the silicon wafer will breakdown causing a short
> circuit
> through the silicon wafer. Therefore I want to apply an insulation layer
> on
> the
> silicon before the bonding. This layer will most likely be an oxide.
> The insulating layer is likely to interfere with the anodic bonding
> process.
> Has anyone tried a similar process ? The parameters that I am most
> interested in
> are the thickness of the insulating layer and the voltage and temperature
> for
> the anodic bonding process.... Voltages that I expect to use are around 50
> -
> 250V.