durusmail: mems-talk: Techniques for Dopant Profiling in Si
Techniques for Dopant Profiling in Si
Techniques for Dopant Profiling in Si
Thomas Wolff (WEP)
2007-08-30
Did you check the Electrochemical CV on Silicon yourself? We use it in our
lab for Silicon with
good success. ECV the benefit, that semiconductor structures with rough
surface in the micron-
range  can be profiled. To my experience SR as well as SIMS have problems
with the profiling of
samples with rough surface.

_________________________________________________________
mailto:thomas.wolff@wepcontrol.com   ·
Tel +49-7723-9197-27
  WEP
  Bregstrasse 90
  D-78120 Furtwangen
  http://www.wepcontrol.com 
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