Hello Deepa,
I am also planning to dry etch oxide (TEOS
deposition)in TRION system using CHF3 and O2. What
process setting you are using and what is your mask.
Is it a photoresist and what type. IF you get any info
from anyone else, please let me know.

Thanks
Prabhu



--- deepa sree  wrote:

>   Hello All:
>     I am having difficulty in etching a silicon
> oxide layer that I deposited in a Plasma therm
> system with Silane and Nitrous oxide. Thickness is
> about 8000 A. It etches really fast (about 30
> seconds) in 5:1 BOE, but doesn’t etch at all
> in a dry etch system. I am using Oxygen and CHF3 for
> etching. I have tried various gas ratios, power and
> pressure settings, but I am not able to etch this
> layer. I need to use a dry etch for my application.
> Any suggestions about etch or deposition is
> appreciated.
>