Hi Mukti,
you might look at SEMI Document 4268 (SEMI MF723-1105) "Practice for
conversion between resistivity and dopant or carrier density for
Boron-doped, Phosphorus-doped and Arsenic-doped Silicon". We usually use
these formula to calculate sheet resistivity from ECV-measured doping
profiles, and the results really prove to be very reliable over a very high
doping range, also for very high doping levels.

Best regards, Thomas


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mailto:thomas.wolff@wepcontrol.com . Tel +49-7723-9197-27
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-----Original Message-----
From: Rana, Mukti M [mailto:mrana@uta.edu]
Sent: Thursday, September 27, 2007 6:57 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Poly Silicon Resistivity

Hello,

Can anyone suggest me the variation of resistivity of polysilicon with
doping concentrations? Reference of any paper or article will be
appreciated. Thank you.

Mukti M Rana