I want to utilize MEMS  AlGaAs micro cantilevers that I fabricate on GaAs , as
electrodes. For this, I believe I have to dope the AlGaAs layers very highly n
type or p type, to achieve high conductivity. I want to bias the electrodes and
generate a strong electric field in the vicinity of the device.. Can someone
help in deciding the doping concentration for this.

Also, how closely in strenght and field generated do highly doped semiconductors
behave when compared to traditional electrodes made out of copper or gold??


Regards
Vaibhav Mathur

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