Hi,

I think adhesive bonding (BCB, SU8 or dry film) will do.
Removal of the Si backside can be done by: KOH etching, DRIE of Si or e=
ven
grinding of the Si can be performed.

Regards,
Peter Kuijpers
MiPlaza
DTS/TFF
High Tech Campus 04
Room: WAGp5-11
5656 AE Eindhoven
The Netherlands


>I have a question on how and what material can be used to bond SiN (waf=
er
>1) with SiN (wafer 2). Secondly, does anybody know what process can be =
used
>to totally remove a part of back side Si Wafer without affecting the Si=
N
>layer  at the front side.