>From my experience, KOH and any other primary amine etching of Si don't go
hand in hand with uniformity. Try a quaternary amine: TMAH is great for high
etch rates; the more concentrated (>25%) and smoother the resulting surface
and the lower the ER. Alcohols can be mixed to reduce the ER even lower.



On Dec 21, 2007 8:15 AM, Andrea Mazzolari  wrote:

> Etch rate of HNA depends strongly on HNA composition.
>
> With the right mixings you can obtain very low etch rate.
>
> See Chemical Etching of Silicon, B. Schwart and H. Robbin, J. EIectrochem.
> Soc, Vol. 123, No. 12.
>
> on line you can find also other articles from the same authors.
>
> In any case, in my opinion the best solution is to use KOH at room
> temperature (it will works on 110 or 100 wafers, not 111)
>
> Best regards,
> Andrea