Happy New Year to all!

Thanks Ed and Jianhua for your replies. I have to notice your point next
time we do experiment. Furthermore, I also thought there might be some
problem with the evaporation. It was likely that we have heated the
photoresist too much (current around 80A). I assume when the PR getting
damaged, it is difficult to remove PR completely. Do you think this is a
problem?

Best regards,
Nam

On Jan 3, 2008 7:50 AM, Jianhua Tong  wrote:

> Hi there,
>
> you might try this recipe:
>
> Spin S1818, 3000rpm.
> Prebake at 95C for 1 min.
> Expose, the time depends on your mask aligner.
> Develop,  Shipley MF321, around 45s, make sure the required area is
> developed
> completely.
> Bake: 60C for 30min hotplate.
> E-beam Evaporate Au/Cr, keep the evaporate rate less than 0.3nm/sec.
> Soak in acetone and ultrasonicate to finish the lift-off.
>