Harry,
      Just had experience in a totally different field but replacing an
RCA clean.  Customer using one of our CVD units was doing an RCA clean
and we persuaded him to test a simple plasma clean to replace his RCA
clean.  He was using small Si pieces and the plasma clean was easy and
worked well.

Bill Moffat, CEO
Yield Engineering Systems, Inc.
203-A Lawrence Drive, Livermore, CA  94551-5152
(925) 373-8353

www.yieldengineering.com


-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of Xiaochen Sun
Sent: Tuesday, February 05, 2008 8:25 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Si/Ge pieces surface cleaning

Hi,

I used to grow materials using UHVCVD on Si wafer. To prepare the wafer,
we usually did RCA cleaning followed by N2 spin dry. And the growth was
successful. Recently, we want to try some growth on Si/Ge pieces, but
have this surface preparation problem. The spin dry machine can only
accept 4" or 6" wafer but not pieces. We tried to use N2 gun to blow the
pieces after chemical treatment. But the result was not so good,
especially on the peripheral part of the pieces due to the possible
water residue on the edge.
Do you guys have any experience on pieces sample growth and give some
advices?