Dear all,

I had a 20nmCr/ 200nmAu film sputtert on silicon. This setup has been treated at
350°C for an hour. At the final Hf etching step which I used to remove the
BOX of an SOI wafer the Au film peeled of.

Does anybody have an explanation? Do I need a diffusion barrier between the Cr
and the Au? Or has anyone a suggestion for another adhesion layer?

Kind regrads,
Heiko

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