Why not using ion-beam etching?

2008/7/22, K. V. Sridhar :
> Hi all
>
> I am trying to etch Ni thin films using Trion's ICP RIE system. System
> specifications are: ICP power can be varied from 0-1200W, RIE from 0-600W,
> pressure from 10-120mT and has Ar, Cl2, BCl3, N2, CF4, O2. Photo resist
> (AZ5214 E, AZ5206E) was used to mask the Ni films. I am trying to etch
> circles with 1 micron  diameter in the  Ni films.
>
> I tried different recipes but was not able to etch Nickle in the 1 micron
> features. I used 24sccm Ar, 6sccm Cl2 different ICP, RIE powers at 20mt
> pressure. Ni(30nm) was desposited using e-beam evaporator. After the process
> it was observed that the photo resist was not etched completely but turned
> dark.
>
> If someone can suggest me a recipe to etch Ni that will be very helpful.

--
Best regards,
Yours sincerely
Fei Wang
______________
State Key Lab of Transducer Technology,
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
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Email：wangfeiustc@gmail.com
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