Another possible solution of resisit adhesion is a H2 terminated clean used by
ASM's epi and ALD group.  We've shown the ability to process SiGe epi at 650C
without any bake step and SIC depostion for ALD.  The stability of the Si-H2
bonds last for 3-5 days.  I would like to try this for an lithography
application.  If this is something you would like to try I can clean some
samples in Phoenix.

Bruce Neufeld
Cereus Technology
480-664-7096
-----Original Message-----
From: "rmartin@systron.com" 
Sent: 8/15/2008 12:08 PM
To: "madhavrrao@yahoo.co.in" ; "General MEMS discussion"

Subject: Re: [mems-talk] Photolithography - Resist peeling

      Moisture and contaminations are the leading causes for resist
lifting.  You may want to ensure a clean, dry substrate before applying
photoresist (pre-clean and bake).  Then you may also want to use an
adhesion promoter (HMDS).  Good luck.

       Ron Martin | Systron Donner Automotive
  Job Title: Photolithography Engineer | Location:
      Concord, CA | Extension: 6563 | Outside:
                   1-925-671-6563
             E-mail: rmartin@systron.com

---- Original message -----
From: madhav rao  
Subject  [mems-talk] Photolithography -  Resist peeling

Hi,
       I am experiencing a problem in patterning on silicon-di-oxide
wafers; I am using SHIPLEY 1818 resist to get a thickness of 2.5 micron; 6
seconds of exposure time. After developing for 60 seconds, I observe, the
resist layer peels off; leaving no patterns on the wafer. Also I had
soft-baked the resist at 95 C for 2 minutes in hot-plate.
This seems strange to me, as a month ago, I had successfully transferred
the patterns on to silicon-di-oxide wafers.
I am using mylar film masks.
Please let me know, if any one had experienced similar problems before; and
if so, could you let me know suggestions to solve ?