Hi Bruce!
i'm interested on your ability to keep Si-H2 bonds for such a long period,
do you have spectroscopic data that supports your claim? Any XPS you have
done showing the signal across time?

Thank you!

On Fri, Aug 15, 2008 at 2:33 PM, Bruce Neufeld wrote:

> Another possible solution of resisit adhesion is a H2 terminated clean used
> by ASM's epi and ALD group.  We've shown the ability to process SiGe epi at
> 650C without any bake step and SIC depostion for ALD.  The stability of the
> Si-H2 bonds last for 3-5 days.  I would like to try this for an lithography
> application.  If this is something you would like to try I can clean some
> samples in Phoenix.
>
> Bruce Neufeld
> Cereus Technology
> 480-664-7096

--
_fm