Hello,

I am interested in the experience of the community on the issue of
stress (compressive or tensile), and stress gradient (normal to the
wafer surface), in the various approaches to silicon-on-insulator
material (bonded silicon, oxygen implanted, et cetera).  Effects of
doping type and SOI surface silicon and buried oxide layer thicknesses
on this stress also are of interest.

Thanks, Al

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Albert K. Henning, PhD
Director of MEMS Technology
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA  95008
408-379-9069  ext 101
ahenning@nanoink.net