For the original descriptions of the
RCA-1 (NH4OH+H2O2+H2O) and
RCA-2 (HCl+H2O2+H2O)
cleaning solutions, see
Werner Kern and David A. Puotinen,
"Cleaning solutions based on hydrogen peroxide
for use in silicon semiconductor technology,"
RCA Review, vol. 30, no. 2, pp. 187-206, Jun. 1970.

For some etch rates in
pirahna (which is H2SO4 + H2O2 in various ratios), see
Kirt R. Williams and Richard S. Muller,
"Etch rates for micromachining processsing,"
JMEMS, vol. 5, no. 4, pp. 256-269, Dec. 1996.