Hi Sebastian

How about ALD deposited Al2O3, it is deposited at low temperature, conformal
and the etch-rate in silicon DRIE is very low. If I'm correct, selectivities
of 1:10000 are reported.

Kind regards, Henk van Zeijl

Delft University of Technology / DIMES
POBox 5053
NL-2600 GB  DELFT
The Netherlands
phone: ++31 15 2781092
fax:   ++31 15 2787369
Email: h.w.vanzeijl@dimes.tudelft.nl
http://www.dimes.tudelft.nl

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of Sebastian Sosin
Sent: 13 November 2008 15:38
To: mems-talk@memsnet.org
Subject: [mems-talk] etch stop layers fro silicon DRIE

Does anyone have any knowledge of other etch stop layers for silicon DRIE,
besides SiO2 and Al? We have an Adixen system and for my process it would
save extra work to have something else as etch stop layer (not Al or SiO2).

Sebastian Sosin