durusmail: mems-talk: etch stop layers for silicon DRIE
etch stop layers for silicon DRIE
2008-11-13
2008-11-13
2008-11-13
2008-11-14
2008-11-14
2008-11-17
etch stop layers for silicon DRIE
Xiaoguang Liu
2008-11-13
Hi Henk

I kind of remember that the 10000:1 ratio is only possible in
cryogenic DRIE, not in Bosch process.

Best
Leo

On Thu, Nov 13, 2008 at 4:17 PM, Henk van Zeijl  wrote:
> Hi Sebastian
>
> How about ALD deposited Al2O3, it is deposited at low temperature, conformal
> and the etch-rate in silicon DRIE is very low. If I'm correct, selectivities
> of 1:10000 are reported.
>
> Kind regards, Henk van Zeijl
>

--
Xiaoguang "Leo" Liu
Birck Nanotechnology Center,
Purdue University,
1205 W.State Street, West Lafayette, IN, 47906 USA
liu79@purdue.edu
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