Its possible to use image reversal for complete control of the resist side wall.
Think up to 40 micron thick resist. Side wall control from -22 degrees, through
vertical to +22 degrees.  You pick the side wall angle.  Contact me for full
information.

Bill Moffat

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of c c
Sent: Tuesday, December 09, 2008 7:01 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] RIE etch of photoresist

Hi,

I Want to etch photoresist wall, with angle near 90°, size near 20µm:

Is it possible to do that with a Plasma with O2-CF4-N2 800W?

What flows can i use for O2-CF4-N2?