Hi Michael, the devices are single layer structures, and they should
not have an oxide layer: the observation of buckling and curvature was
made immediately (2 mins) after the SiO2 etch to release the
structures (15 mins in 50% HF), which would have stripped any oxide.
The process was entirely based on photoresist masking and wet etching,
so I don't think it can be any other layer causing the stress issues.

Jason Milne


Quoting Michael :

> Hi Jason
>
> Do you have any oxide layer on your micro-bridge or cantilever devices?
> Are they a single layer structures? It is important that you are
> sure you made the structures out of the device layer only.
> regards,