As long as I know the thermal oxide resistivity is not affected by silicon
doping.
Also doping doesn't cause any electrical leakage.
Electrical leakage is caused more by metallic contamination, defects, etc.

SM

----- Original Message -----
From: "ameya g" 
To: 
Sent: Saturday, December 20, 2008 4:00 AM
Subject: [mems-talk] Oxidation of doped silicon


> Hi all
>
> I was curious to know whether the thermal oxide (~100 nm) grown from doped
> silicon has lower resistivity than the one grown from undoped silicon?
>
> Can such an oxide cause any electrical leakage? Please let me know if anyone
> has ever had any issues with this.
>
> Thanks,
> -Ameya