Hello everybody,

I would like to know if anybody has etched Silicon using a Chlorine/BCl3
plasma with ZEP 520 (positive ebeam resist) as etch mask. If so, what was
the resist thickness and recipe and how deep was the silicon etched. If you
have details about selectivity of etch.

The other gases we have in our RIE system are CHF3, C2F4, Ar, Oxygen, CH2F2.
If anybody has used a recipe with these gases to etch Silicon using RIE, do
let me know what mask you used and what was the etch depth.

--
Ananth Krishnan
Texas, USA