Hello everyone,

I'm having difficulty removing the polymer under the dielectric material whose
Al is around 60nm deposited on it

We have done these steps: on the substrate: ~600nm SiO2 or SiNx are deposited;
then ~200nm polymer is applied, after that again 600nm SiO2 or SiNx layer, and
the last is Al ~60-100nm (ebeam evaporation)

I removed completely the polymer, for around 3h, using an asher (oxygen-plasma)
if the samples don´t have the Al layer on it.  For the same ashing process I
didn´t get the same result for another sample whoose Al on it.

That´s why I would like to know:  does anyone know whether it´s possible to get
isotropic etching using only oxygen gas (maybe using ICP)?  Or any suggestion
will be appreciated.

Many thanks!

Onny Setyawati
Institut für Nanostrukturtechnologie und Analytik
Heinrich-Plett-Str.40
D-34132 Kassel