It should be possible if you have a strong enough ICP system. My
understanding is you have a SiO2+Al structure with polymer underneath and
you want to release it.

The first thing you need check is whether your Al layer covers all of your
polymer and how much undercut you need to release your structure. >1um
undercutting may be impossible.

Jie

On Thu, Jan 29, 2009 at 9:23 AM, onny setya  wrote:

>
> Hello everyone,
>
> I'm having difficulty removing the polymer under the dielectric material
> whose Al is around 60nm deposited on it
>
> We have done these steps: on the substrate: ~600nm SiO2 or SiNx are
> deposited; then ~200nm polymer is applied, after that again 600nm SiO2 or
> SiNx layer, and the last is Al ~60-100nm (ebeam evaporation)
>
> I removed completely the polymer, for around 3h, using an asher
> (oxygen-plasma) if the samples don´t have the Al layer on it.  For the same
> ashing process I didn´t get the same result for another sample whoose Al on
> it.
>
> That´s why I would like to know:  does anyone know whether it´s possible to
> get isotropic etching using only oxygen gas (maybe using ICP)?  Or any
> suggestion will be appreciated.
>
> Many thanks!
>
> Onny Setyawati

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: zoujiepku@gmail.com
*  Homepage: http://plaza.ufl.edu/zoujie/