Dear all,

Has anybody tested the stress in bulk micromachining (ICP after anodic bonding)?
What's the magnitude of the stress?

While bonding induced stress is apparent (the bonded wafer is convex, sometimes
up to a hundred um), are ICP induced stress and doping induced stress (0.01-0.02
Ohm.cm) significant? Bonding induced stress can be isolated to some extent by
anchor design.

In surface micromachining, foled beams are used to reduce the effect of stress.
Any other choice in structure design? Will some perforation do it(say, near the
two ends of the suspension beam)?

Thanks in advance.

Matthew King