Alcatel report low stress and very high WER with a Si3N4 film deposited
at 20 C.

-Greg

On Tue, 22 Sep 1998 10:15:27 -0400 (EDT), Carlos Mastrangelo wrote:

>
>You can deposit films by UV photopolymerization at very low
>temperatures --reported down to -10C back in the mid 70s.
>
>                                       -CHM
>
>On Wed, 9 Sep 1998, lee ki seong wrote:
>
>>
>> hello, colleague
>> It might be silly question to somebody.
>>
>> but I think it's impossible.
>>
>> Is there anybody who try to deposit some film at very low temperature.
>>
>> In PECVD plasma usually occur a little high temp because mobility of
>>    electrons are better as temperature higher.
>>
>> I think it'll possible ,if there is something to break the eletron orbit
>>   from nuclear.
>>
>> If there is anybody to make a new process , would you join me and
>>   make revolution.
>>
>> with thanks.
>>
>>
>
>
>