Hi All,

I'm trying to etch Si (2 microns, Device layer of SOI wafer) using RIE. I
have a Au/Cr layer (0.225microns) and AZ3312(0.8microns) on top of it as
mask. I used pressure 50mTorr , SF6 25scccm, O2 5sccm, ICP Power 100 and RF
power as 50, but with this parameters the etch rate is approx 0.1
microns/min, which is low. And I don't won't to keep my samples in chamber
for 20-25 mins to avoid any damage to the Au/Cr layer or PR.
Any Suggestions to increase the etch rate or if I can keep my samples in the
chamber for that long without damaging it.
If any one has done something similar, pls oblige.
I'm looking for Anisotropic etch.
Thanks

--
Syed Yasir Abbas Rizvi
Dept of Electrical & Comp Engineering
University Of Windsor
Windsor-N9B 3P4
Canada
http://yasirsview.blogspot.com/

There are two ways to shine...You can be the candle or, the mirror that
reflects it.