I will be doing both descum and ashing of both positive and negative resists
as part of my process flow and would like to know what is a good selectivity
number for a dry process as there will be oxides present on the wafer.  I
will be doing both the descum and ashing processes using O2 gas.

Thanks to all,

Evelyn

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EVELYN BENABE
Graduate Research Assistant
RF Microsystems Research Group
University of South Florida
4202 East Fowler Avenue
Tampa, FL 33620
Office: ENB 412
Office Phone: (813)-974-4851
Email: benabe@mail.usf.edu