Hi,

We have problems controlling the strength of sealing when we perform
anodic bonding in an atmosphere with low flow of Argon during the bond
procedure of silicon substrates to Borofloat glass wafers. It is probably
due to the charging affects. Does anyone have similar difficulties and
solutions to improve the quality of bonding (preparation & sealing
procedure)?

Thank you very much for the help.
Regards,

Dr. Christophe Gorecki
Directeur de Recherche CNRS
Département MN2S, Institut FEMTO-ST
UFR des Sciences et Techniques
16 route de Gray, 25030 Besançon, France
Tel: +33-3-81666607
Fax: +33-3-81666423
e-mail: christophe.gorecki@femto-st.fr