Hi,

I want to release my LTO (deposited by LPCVD) sacrificial layer uisng
BHF/BOE. Previous posts said that the selectivity is good over LPCVD silicon
nitride, but bad over PECVD silicon nitride. I would like to know its
selectivity over silicon nitride sputterred at room temperature and a rate
of ~1.5nm/min.

Any answer will be appreciated.

Thanks,

Yu Wang