Hello Alexandre,

Would you mind describing a little more of what you mean by a bubble
formed?  Where was the bubble, in the coating?  How are you trying to
etch the resist?  I assume when you say that you are trying to etch the
resist you are trying to just remove the resist and lift off the Si
layer you deposited?  Is the silane injected at an elevated temperature?

Thanks, but need some more information to help fix the problem.

Best Regards,
Dustin Warren

EV Group
invent * innovate * implement
Application Engineer - Direct: +1 (480) 305 2447, Main: +1 (480) 305
2400 Fax: +1 (480) 305 2401
Cell: +1 (480) 274 3894
E-Mail: D.Warren@EVGroup.com, Web: www.EVGroup.com


-----Original Message-----
From: Alexandre Boe [mailto:Alexandre.Boe@uclouvain.be]
Sent: Saturday, April 25, 2009 11:20 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Photoresist and silane

Dear all,

We are depositing silane (in a vacuum chamber + injection of a small
quantity of silane) on silicon substrates. The photoresist used for the
masking is AZ5214 (lift-off process).

When we want to etch the resist after depoition, we cannot and some
bubles
appeared. One possible explanantion is that the photorsist reacts with
the
silane, more precisely, the phenol, alcool or acid functions we can find
in the photoresist.

Have you an idea to avoid such a problem ? Or a photoresist (negative or
reversal) without these functions ?

Regards,

Alexandre BOE