Hello shifeng,

Try to break up the deposition in steps - the grain size is related to the layer
thickness in one step, so with small wait times you introduce a slight oxide
layer and disrupt growth.


Best regards
Gudrun Henn


-----Ursprüngliche Nachricht-----
Von: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] Im
Auftrag von li shifeng
Gesendet: Dienstag, 28. April 2009 20:32
An: mems-talk@memsnet.org
Betreff: [mems-talk] gain size of Al thin film

Hi, All,

I used e-beam evaporator to deposit 50nm to 100nm thick Al thin film on the
glass substrate. The gain size of Al is up to 50nm. I just wonder if there is
any method to reduece the gain size of Al on the substrate. Thanks for sharing
any information.

shifeng