Dear Mehmet,

I think you are talking about the stress issue generated at the silicon/oxide
interface. As far as I known, firstly, this interface should not have a big
stress problem. And if you are sure that the stress indeed happens at this
interface, then a high temperature annealing would help. Idealy, higher than 900
degree C, during the annealing, the oxide layer will reflow, which you can
imagine a water flow between your bulk substrate and si device layer. So, any
stress at this interface should be released. If your device can bear, say, 1000
degree C, possibly there will no stress problem.

Hope this can help you.

Sincerely,
Zhijian ZHOU
HKUST