Dear all,

I do surface roughness measurement of Si using profilometer, and I have
observed that the measurement results are quite dependent on the
measurement parameters such as the measurement length and force,
wheather arithmetic avarage or rms, etc. My question is, are there any
standard parameters for the surface roughness measurement of Si? For
example, you find in the literature that the surface roughness of Si
must be less than 1nm for Si-Si-fusion bonding, but there is no
description about with which parameters they measured it, so I don't
know wheather the surface roughness I measured is comparable with those
in the literature.

I'll be very thankful for any suggestions!

Regards

Natsuki