Hi all,
              I
have <110> oriented Si wafer deposited with 1 um of SiO2. over which I have to
transfer a pattern, for that first i cleaned the wafers with acetone and IPA and
then nitrogen blown for drying it. then I spin coated the wafer with PR AZ5214E
of thickness 1.3 um, bake it for 1 minute at 95 degrees. Then i write the
pattern directly using Laser writer and developed the PR using MF26A developer
solution. then i dipped the wafer in DI water and i observed that the entire PR
is peeled off the wafer. I tried the same for two such samples but the problem
persisted. Anybody knows how it happens and how to get rid off this mess,
anything regarding this will be highly appreciated, thanking you

Renil